Dynamics of chemisorption and indiffusion at semiconductor surfaces
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A new technique, employing Green's function methods and the Hellmann-Feynman theorem, makes it possible to perform realistic simulations of atomic motion in covalently-bonded systems. For atoms of various chemical species incident on the (110) surfaces of GaAs and InP, many interesting phenomena have been observed. These include (1) up to 6 distinct initial chemisorption sites for a single species, (2) indiffusion of small atoms (B, C, and N) via process that involves correlated motion of the substrate atoms, and (3) highly anharmonic vibrations for some bonding sites. © 1988.
author list (cited authors)
Menon, M., & Allen, R. E.