Dynamics of chemisorption and indiffusion at semiconductor surfaces Academic Article uri icon

abstract

  • A new technique, employing Green's function methods and the Hellmann-Feynman theorem, makes it possible to perform realistic simulations of atomic motion in covalently-bonded systems. For atoms of various chemical species incident on the (110) surfaces of GaAs and InP, many interesting phenomena have been observed. These include (1) up to 6 distinct initial chemisorption sites for a single species, (2) indiffusion of small atoms (B, C, and N) via process that involves correlated motion of the substrate atoms, and (3) highly anharmonic vibrations for some bonding sites. © 1988.

author list (cited authors)

  • Menon, M., & Allen, R. E.

citation count

  • 7

publication date

  • January 1988