Si/transition-metal Schottky barriers: Fermi-level pinning by Si dangling bonds at interfacial vacancies
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The Schottky barriers formed by deposition of transition metals on Si surfaces are explained in terms of Fermi-level pinning by Si dangling bonds that are sheltered by vacancies at Si/transition-metal-silicide interfaces. © 1984.
author list (cited authors)
Sankey, O. F., Allen, R. E., & Dow, J. D.