SI-TRANSITION-METAL SCHOTTKY BARRIERS - FERMI-LEVEL PINNING BY SI DANGLING BONDS AT INTERFACIAL VACANCIES
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The Schottky barriers formed by deposition of transition metals on Si surfaces are explained in terms of Fermi-level pinning by Si dangling bonds that are sheltered by vacancies at Si/transition-metal-silicide interfaces. 1984.
SOLID STATE COMMUNICATIONS
author list (cited authors)
SANKEY, O. F., ALLEN, R. E., & DOW, J. D.
complete list of authors
SANKEY, OF||ALLEN, RE||DOW, JD