SI-TRANSITION-METAL SCHOTTKY BARRIERS - FERMI-LEVEL PINNING BY SI DANGLING BONDS AT INTERFACIAL VACANCIES Academic Article uri icon

abstract

  • The Schottky barriers formed by deposition of transition metals on Si surfaces are explained in terms of Fermi-level pinning by Si dangling bonds that are sheltered by vacancies at Si/transition-metal-silicide interfaces. 1984.

published proceedings

  • SOLID STATE COMMUNICATIONS

altmetric score

  • 3

author list (cited authors)

  • SANKEY, O. F., ALLEN, R. E., & DOW, J. D.

citation count

  • 51

complete list of authors

  • SANKEY, OF||ALLEN, RE||DOW, JD

publication date

  • January 1984