Si/transition-metal Schottky barriers: Fermi-level pinning by Si dangling bonds at interfacial vacancies Academic Article uri icon

abstract

  • The Schottky barriers formed by deposition of transition metals on Si surfaces are explained in terms of Fermi-level pinning by Si dangling bonds that are sheltered by vacancies at Si/transition-metal-silicide interfaces. © 1984.

altmetric score

  • 3

author list (cited authors)

  • Sankey, O. F., Allen, R. E., & Dow, J. D.

citation count

  • 49

publication date

  • January 1984