Effects of the band offset on interfacial deep levels Academic Article uri icon

abstract

  • The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset. © 1988, Center for the Study of Law and Religion at Emory University. All rights reserved.

author list (cited authors)

  • Beres, R. P., Allen, R. E., & Dow, J. D.

citation count

  • 0

publication date

  • February 1988