EFFECTS OF THE BAND OFFSET ON INTERFACIAL DEEP LEVELS Academic Article uri icon

abstract

  • The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset.

published proceedings

  • JOURNAL OF MATERIALS RESEARCH

author list (cited authors)

  • BERES, R. P., ALLEN, R. E., & DOW, J. D.

citation count

  • 0

complete list of authors

  • BERES, RP||ALLEN, RE||DOW, JD

publication date

  • February 1988