Effects of the band offset on interfacial deep levels
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The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset. © 1988, Center for the Study of Law and Religion at Emory University. All rights reserved.
author list (cited authors)
Beres, R. P., Allen, R. E., & Dow, J. D.