Time-dependent chemisorption on a semiconductor surface
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The microscopic aspects of interfacial growth are only crudely accessible to experiment. We have therefore developed a technique for computer-experimental studies of atoms and molecules deposited on solid surfaces, in which forces are determined from the electronic structure rather than atomic potentials. Here we report simulations of Cl, O, Se, N, As, Si, Ge, Al, Ga, Zn, Hg, Cu, and Au on the (1 1 0) surface of GaAs. The results exhibit non-trivial variety in both the dynamics and final bonding sites. © 1987.
author list (cited authors)
Menon, M., & Allen, R. E.