TIME-DEPENDENT CHEMISORPTION ON A SEMICONDUCTOR SURFACE Academic Article

abstract

• The microscopic aspects of interfacial growth are only crudely accessible to experiment. We have therefore developed a technique for computer-experimental studies of atoms and molecules deposited on solid surfaces, in which forces are determined from the electronic structure rather than atomic potentials. Here we report simulations of Cl, O, Se, N, As, Si, Ge, Al, Ga, Zn, Hg, Cu, and Au on the (1 1 0) surface of GaAs. The results exhibit non-trivial variety in both the dynamics and final bonding sites. 1987.

authors

• Allen, Roland

published proceedings

• SOLID STATE COMMUNICATIONS

author list (cited authors)

• MENON, M., & ALLEN, R. E.

citation count

• 7

complete list of authors

• MENON, M||ALLEN, RE

publication date

• October 1987

publisher

• Elsevier  Publisher

published in

• Solid State Communications  Journal

Digital Object Identifier (DOI)

• 10.1016/0038-1098(87)90981-1

start page

• 353

end page

• 356

volume

• 64

issue

• 3

URL

• http://dx.doi.org/10.1016/0038-1098(87)90981-1