Nonthermal transition of GaAs in ultra-intense laser radiation field
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Using the technique of fight-binding electron-ion dynamics, we have calculated the response of crystalline GaAs when a femtosecond laser pulse excites 1-20% of the valence electrons. Above a threshold fluence, which corresponds to promotion of about 12% of the valence electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This result supports the conclusion that structural changes on a subpicosecond time scale observed in pump-probe experiments are of a nonthermal nature.
author list (cited authors)
DUMITRICĂ, T., & ALLEN, R. E.