Nonthermal transition of GaAs in ultra-intense laser radiation field Conference Paper uri icon

abstract

  • Using the technique of fight-binding electron-ion dynamics, we have calculated the response of crystalline GaAs when a femtosecond laser pulse excites 1-20% of the valence electrons. Above a threshold fluence, which corresponds to promotion of about 12% of the valence electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This result supports the conclusion that structural changes on a subpicosecond time scale observed in pump-probe experiments are of a nonthermal nature.

author list (cited authors)

  • DUMITRIC─é, T., & ALLEN, R. E.

citation count

  • 4

publication date

  • April 2002