Nonthermal transition of GaAs in ultra-intense laser radiation field Conference Paper

abstract

• Using the technique of tight-binding electronion dynamics, we have calculated the response of crystalline GaAs when a femtosecond laser pulse excites 120% of the valence electrons. Above a threshold fluence, which corresponds to promotion of about 12% of the valence electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This result supports the conclusion that structural changes on a subpicosecond time scale observed in pump-probe experiments are of a nonthermal nature.

authors

• Allen, Roland

published proceedings

• LASER AND PARTICLE BEAMS

author list (cited authors)

• Dumitrica, T., & Allen, R. E.

citation count

• 4

complete list of authors

• Dumitrica, T||Allen, RE

publication date

• April 2002

publisher

• Hindawi  Publisher

published in

• Laser and Particle Beams  Journal

keywords

• Laser
• Phase Transition
• Semiconductors
• Ultrafast

Digital Object Identifier (DOI)

• 10.1017/S026303460220213X

start page

• 237

end page

• 242

volume

• 20

issue

• 2

URL

• http://dx.doi.org/10.1017/s026303460220213x