Theory of GaAsoxide interface states
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The discrete GaAsoxide interface states observed by Lagowski et al. can be explained by defects in the GaAs surface: The deep levels are in agreement with our predictions for surface antisite defects, and the shallow levels (observed for thick oxides) agree with our predictions for surface oxygen impurities on anion and cation sites. © 1983.
author list (cited authors)
Allen, R. E., & Low, J. D.