THEORY OF GAAS-OXIDE INTERFACE STATES

abstract

• The discrete GaAsoxide interface states observed by Lagowski et al. can be explained by defects in the GaAs surface: The deep levels are in agreement with our predictions for surface antisite defects, and the shallow levels (observed for thick oxides) agree with our predictions for surface oxygen impurities on anion and cation sites. 1983.

authors

• Allen, Roland

published proceedings

• SOLID STATE COMMUNICATIONS

author list (cited authors)

• ALLEN, R. E., & DOW, J. D.

citation count

• 10

complete list of authors

• ALLEN, RE||DOW, JD

publication date

• January 1983

publisher

• Elsevier  Publisher

published in

• Solid State Communications  Journal

Digital Object Identifier (DOI)

• 10.1016/0038-1098(83)90900-6

start page

• 379

end page

• 381

volume

• 45

issue

• 4

URL

• http://dx.doi.org/10.1016/0038-1098(83)90900-6