THEORY OF DEFECT COMPLEXES AT SEMICONDUCTOR SURFACES Academic Article

abstract

• We report calculations of deep levels associated with defect complexes at semiconductor surfaces. For the antistructure defect (AsGa, GaAs) at the (110) surface of GaAs, the results are qualitatively the same as the sum of those for the individual antisite defects AsGa and GaAs - a donor level and two acceptor levels within the band gap. 1987.

authors

• Allen, Roland

published proceedings

• SOLID STATE COMMUNICATIONS

author list (cited authors)

• REN, S. F., & ALLEN, R. E.

citation count

• 7

complete list of authors

• REN, SF||ALLEN, RE

publication date

• October 1987

publisher

• Elsevier  Publisher

published in

• Solid State Communications  Journal

Digital Object Identifier (DOI)

• 10.1016/0038-1098(87)90787-3

start page

• 589

end page

• 591

volume

• 64

issue

• 4

URL

• http://dx.doi.org/10.1016/0038-1098(87)90787-3