Theory of defect complexes at semiconductor surfaces
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We report calculations of deep levels associated with defect complexes at semiconductor surfaces. For the antistructure defect (AsGa, GaAs) at the (110) surface of GaAs, the results are qualitatively the same as the sum of those for the individual antisite defects AsGa and GaAs - a donor level and two acceptor levels within the band gap. © 1987.
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