Second-order susceptibility from a tight-binding Hamiltonian
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Using a new formalism that modifies a tight-binding Hamiltonian to include interaction with a time-dependent electromagnetic field, we have obtained an analytical expression for the second-order susceptibility. This expression has been used to calculate the energy dependence of (Formula presented) for GaAs. The results are in agreement with previous calculations and with available experimental data. © 1998 The American Physical Society.
author list (cited authors)
Dumitrică, T., Graves, J. S., & Allen, R. E.