Dangling-bond resonances and intrinsic Schottky barriers
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Experimental studies indicate that an intrinsic mechanism of Schottky barrier formation dominates when the concentration of defects is very small. Here we address this intrinsic mechanism by considering a one-dimensional model with one s orbital and one p orbital per semiconductor atom and one s orbital per metal atom. Our results suggest that intrinsic Schottky barriers are usually due to dangling-bond resonances, in agreement with the recent work of Lefebvre et al. Even when the resonances are broadened so much that they are unobservable in the density of states, they are still effective in pinning the Fermi energy. © 1989.
author list (cited authors)
Stepien, B., Jedrzejek, C., & Allen, R. E.