Bound and resonant (110) surface electronic states for GaAs, GaP and GaSb
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Dispersion curves E(k) are predicted for the surface electronic bound states and resonances at the relaxed (110) surfaces of GaAs, GaP, and GaSb. GaAs and GaSb are predicted to have no surface states within the fundamental band gap, but GaP is predicted to have unoccupied surface states with energies extending below the conduction band edge, in agreement with experiment. The predicted dispersion curves are in good agreement with the angle-resolved photoemission measurements for GaAs. Using the analytic Green's function, effective-Hamiltonian technique, we are able to locate some new resonant structure. © 1983.
author list (cited authors)
Beres, R. P., Allen, R. E., & Dow, J. D.