Defect complexes and schottky barriers
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Calculations of deep electronic energy levels have been performed for impurity-vacancy pairs at relaxed (110) surfaces of III-V semiconductors. In particular, results are reported for the native complexes (AsGa, VAs) and (GaAs, vga) in GaAs. The predicted levels for these two complexes are respectively close to those for the isolated vacancies, VAs and VGa. This indicates that Fermi-level pinning positions due to surface vacancies will be only quantitatively shifted when the vacancies form complexes with antisite defects. © 1984.
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