Role of surface antisite defects in the formation of heterojunctions
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Fermi level pinning positions were measured for Si overlayers on cleaved, n-type GaAs and GaP substrates. The observed positions are 0.73 ± 0.1 eV and 0.98 ± 0.1 eV above the top of the substrate valence band. Theoretical calculations of the surface antisite acceptor levels predict the same chemical trend on going from GaAs to GaP. This agreement and other arguments suggest an important role for surface defects in the formation of semiconductor heterojunctions. © 1982.
author list (cited authors)
Katnani, A. D., Margaritondo, G., Allen, R. E., & Dow, J. D.