ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF HETEROJUNCTIONS Academic Article

abstract

• Fermi level pinning positions were measured for Si overlayers on cleaved, n-type GaAs and GaP substrates. The observed positions are 0.73 0.1 eV and 0.98 0.1 eV above the top of the substrate valence band. Theoretical calculations of the surface antisite acceptor levels predict the same chemical trend on going from GaAs to GaP. This agreement and other arguments suggest an important role for surface defects in the formation of semiconductor heterojunctions. 1982.

authors

• Allen, Roland

published proceedings

• SOLID STATE COMMUNICATIONS

author list (cited authors)

• KATNANI, A. D., MARGARITONDO, G., ALLEN, R. E., & DOW, J. D.

citation count

• 12

complete list of authors

• KATNANI, AD||MARGARITONDO, G||ALLEN, RE||DOW, JD

publication date

• November 1982

publisher

• Elsevier  Publisher

published in

• Solid State Communications  Journal

Digital Object Identifier (DOI)

• 10.1016/0038-1098(82)91092-4

start page

• 1231

end page

• 1234

volume

• 44

issue

• 8

URL

• http://dx.doi.org/10.1016/0038-1098(82)91092-4