Fano interference of collective excitations in semiconductor quantum wells and lasing without inversion Academic Article

abstract

• Absorption cancellation via tunneling induced Fano interference in semiconductor quantum wells is studied in the presence of the Coulomb interaction between electrons. For a small subband dispersion, gain or loss is determined by single-electron Fano interference. For a large subband dispersion, collective excitations dominate the absorption spectrum and are crucial for the observability of tunneling induced transparency, which exists in spite of subband dispersion. Pumping destroys collective excitations; therefore gain without inversion is possible only for small subband dispersion. 1999 The American Physical Society.

authors

• Scully, Marlan

published proceedings

• Physical Review B

author list (cited authors)

• Nikonov, D. E., Imamolu, A., & Scully, M. O.

citation count

• 145

complete list of authors

• Nikonov, Dmitri E||Imamoğlu, Ataç||Scully, Marlan O

publication date

• May 1999

publisher

• American Physical Society (APS)  Publisher

published in

• Physical review B (PRB)  Journal

Digital Object Identifier (DOI)

• 10.1103/physrevb.59.12212

start page

• 12212

end page

• 12215

volume

• 59

issue

• 19

URL

• http://dx.doi.org/10.1103/physrevb.59.12212