Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers: new scheme for the sum- and difference-frequency generation Conference Paper uri icon

abstract

  • Butt-joint diode lasers for the efficient nonlinear optical mixing in semiconductors are suggested and successfully implemented. First experimental demonstration of the sum-frequency and second-harmonic continuous-wave room-temperature generation in the InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported. Specific features of the butt-joint device, where two butt-joined diode lasers are optically coupled but injection pumped separately, are investigated and the prospects of the difference-frequency (far-infrared) generation are outlined.

author list (cited authors)

  • Nekorkin, S. M., Zvonkov, B. N., Biryukov, A. A., Belyanin, A. A., Aleshkin, V. Y., Morozov, S. V., ... Scully, M. O.

citation count

  • 0

complete list of authors

  • Nekorkin, Sergey M||Zvonkov, Boris N||Biryukov, Anton A||Belyanin, Aleksey A||Aleshkin, Vladimir Ya||Morozov, Sergey V||Kocharovsky, Vitaly V||Kocharovsky, Vladimir V||Scully, Marlan O

publication date

  • March 2006

publisher