Asymmetric Lattice Disorder Induced at Oxide Interfaces Academic Article uri icon

abstract

  • AbstractControl of orderdisorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultrahigh temperature ceramics, and durable nuclear waste forms. At present, the development of promising complex oxides for these applications is hindered by a poor understanding of how interfaces affect lattice disordering processes and defect transport. Here, the evolution of local disorder in ionirradiated La2Ti2O7/SrTiO3 thin film heterostructures is explored using a combination of highresolution scanning transmission electron microscopy, positionaveraged convergent beam electron diffraction, electron energy loss spectroscopy, and ab initio simulations. Highly nonuniform lattice disordering driven by asymmetric oxygen vacancy formation across the interface is observed. Theory calculations indicate that this asymmetry results from differences in the polyhedral connectivity and vacancy formation energies of the two interface components, suggesting ways to manipulate lattice disorder in functional oxide heterostructures.

published proceedings

  • ADVANCED MATERIALS INTERFACES

altmetric score

  • 33

author list (cited authors)

  • Spurgeon, S. R., Kaspar, T. C., Shutthanandan, V., Gigax, J., Shao, L., & Sassi, M.

citation count

  • 13

complete list of authors

  • Spurgeon, Steven R||Kaspar, Tiffany C||Shutthanandan, Vaithiyalingam||Gigax, Jonathan||Shao, Lin||Sassi, Michel

publication date

  • April 2020

publisher