A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power Academic Article

abstract

• The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is 2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.

authors

• Park, Hangue

published proceedings

• ELECTRONICS

altmetric score

• 0.5

author list (cited authors)

• Thanh, D. N., Park, H., & Hong, J.

citation count

• 2

complete list of authors

• Thanh, Dat Nguyen||Park, Hangue||Hong, Jong-Phil

publication date

• October 2019

publisher

• MDPI  Publisher

published in

• Electronics  Journal

keywords

• Cmos
• High Output Power
• Mm-wave
• Oscillator

Digital Object Identifier (DOI)

• 10.3390/electronics8111228

start page

• 1228

end page

• 1228

volume

• 8

issue

• 11

URL

• http://dx.doi.org/10.3390/electronics8111228