Rapid Characterization of Threshold Voltage Fluctuation in MOS Devices Conference Paper

abstract

• We present a technique for fast characterization of random threshold voltage variation in MOS devices. Our VT scatter characterization method measures threshold voltage shift by monitoring the change in gate-to-source voltage VGS for a fixed drain current IDS and drain-to-source voltage VDs. We measure VGs variation for a large set of devices arranged in an individually addressable array and report results of VT scatter measurement from a test chip in a 65 nm SOI CMOS process. We also measure and report the magnitude of local device current mismatch caused by the VT fluctuation. 2007 IEEE.

name of conference

• 2007 IEEE International Conference on Microelectronic Test Structures

authors

• Nowka, Kevin

published proceedings

• 2007 IEEE International Conference on Microelectronic Test Structures

author list (cited authors)

• Agarwal, K., Nassif, S., Liu, F., Hayes, J., & Nowka, K.

citation count

• 16

complete list of authors

• Agarwal, Kanak||Nassif, Sani||Liu, Frank||Hayes, Jerry||Nowka, Kevin

publication date

• March 2007

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 40 Engineering
• 4008 Electrical Engineering
• Bioengineering

Digital Object Identifier (DOI)

• 10.1109/icmts.2007.374458

International Standard Book Number (ISBN) 10

• 142440780X

International Standard Book Number (ISBN) 13

• 9781424407804

start page

• 74

end page

• 77

URL

• http://dx.doi.org/10.1109/icmts.2007.374458