A Test Structure for Characterizing Local Device Mismatches Conference Paper uri icon

abstract

  • We present a test structure for statistical characterization of local device mismatches. The structure contains densely populated SRAM devices arranged in an addressable manner. Measurements on a testchip fabricated in an advanced 65 nm process show little spatial correlation. We vary the nominal threshold voltage of the devices by changing the threshold-adjust implantations and observe that the ratio of standard deviation to mean gets worse with threshold scaling. The large variations observed in the extracted threshold voltage statistics indicate that the random dopant fluctuation is the likely reason behind mismatch in the adjacent devices. 2006 IEEE.

name of conference

  • 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

published proceedings

  • 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.
  • IEEE Symposium on VLSI Circuits, Digest of Technical Papers

author list (cited authors)

  • Agarwal, K., Liu, F., McDowell, C., Nassif, S., Nowka, K., Palmer, M., Acharyya, D., & Plusquellic, J.

citation count

  • 83

complete list of authors

  • Agarwal, Kanak||Liu, Frank||McDowell, Chandler||Nassif, Sani||Nowka, Kevin||Palmer, Meghann||Acharyya, Dhruva||Plusquellic, Jim

publication date

  • January 2006