Growth of GaN Nanowires on Epitaxial GaN
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We report experiments on the formation of GaN nanowires on epitaxial GaN using thin layers of Ni. GaN covered with Ni shows roughening that is strongly dependent on the thickness of the Ni layer and the annealing conditions. With the initial Ni thickness of 0.8 nm we observe formation of Ni-filled antidots. These act as nucleation sites in the growth of GaN nanowires, allowing for the preparation of nanowires with an average diameter as small as 30 nm. Dense and well-oriented nanowires are formed by pulsed metallorganic chemical vapor deposition at 750°C. The size of the Ni features determines the diameter of the GaN nanowires, resulting in good control over the formation process. © 2008 TMS.
author list (cited authors)
Aurongzeb, D., Song, D. Y., Kipshidze, G., Yavich, B., Nyakiti, L., Lee, R., ... Holtz, M.