Thermal oxidation of single crystalline aluminum nitride
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Dry thermal oxidation of low defect density aluminum nitride single crystals was investigated by high resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Oxidation at 800 °C produced an amorphous oxide layer. In the AlN near the interface were many dislocations, stacking faults and domain boundaries, molecular nitrogen and oxygen. Oxidation at 1000 °C produced a crystalline, epitaxial oxide layer with several large grains and twin structures. Near the interface, the oxide was single phase α-Al2O3, while near the surface the oxide was a mixture of γ-Al2O3 and α-Al2O3. The AlN crystal structure was nearly defect- and oxygen-free. The epitaxial relationship between Al2O3 and AlN was (0001) AlN // (011-1-) Al2O3 and [11-00] AlN // [011-1] Al2O3. © 2006 Elsevier Inc. All rights reserved.
author list (cited authors)
Chaudhuri, J., Nyakiti, L., Lee, R. G., Gu, Z., Edgar, J. H., & Wen, J. G.