Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics
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Fluorine functionalization, using XeF 2, was investigated as a way to enhance atomic layer deposition (ALD) of thin, high-κ dielectrics on epitaxial graphene, which would enable the realization of graphene-based device technologies. The XeF 2 dosage time was correlated with oxide coverage and morphology as well as its overall effect on the underlying graphene properties. An optimum XeF 2 dose time of 120 s (PXeF 2=1torr, P N2 = 35 torr) was found to form C-F bonds on 6-7% of the graphene surface, which are presumed to act as additional ALD reaction sites facilitating conformal Al 2O 3 films only 15 nm thick. Under these optimal conditions, the graphene lattice remained essentially undisturbed and the Hall mobility exhibited a 10-25% increase after oxide deposition. These results indicate that this novel technique is a viable path to obtaining ultrathin high-κ dielectrics by ALD on epitaxial graphene. © 2011 Elsevier Ltd. All rights reserved.
author list (cited authors)
Wheeler, V., Garces, N., Nyakiti, L., Myers-Ward, R., Jernigan, G., Culbertson, J., Eddy, C., & Gaskill, D. K.