Fluorine functionalization of epitaxial graphene for uniform deposition of thin high- dielectrics Academic Article uri icon


  • Fluorine functionalization, using XeF 2, was investigated as a way to enhance atomic layer deposition (ALD) of thin, high- dielectrics on epitaxial graphene, which would enable the realization of graphene-based device technologies. The XeF 2 dosage time was correlated with oxide coverage and morphology as well as its overall effect on the underlying graphene properties. An optimum XeF 2 dose time of 120 s (PXeF 2=1torr, P N2 = 35 torr) was found to form C-F bonds on 6-7% of the graphene surface, which are presumed to act as additional ALD reaction sites facilitating conformal Al 2O 3 films only 15 nm thick. Under these optimal conditions, the graphene lattice remained essentially undisturbed and the Hall mobility exhibited a 10-25% increase after oxide deposition. These results indicate that this novel technique is a viable path to obtaining ultrathin high- dielectrics by ALD on epitaxial graphene. 2011 Elsevier Ltd. All rights reserved.

published proceedings

  • Carbon

altmetric score

  • 10.864

author list (cited authors)

  • Wheeler, V., Garces, N., Nyakiti, L., Myers-Ward, R., Jernigan, G., Culbertson, J., Eddy, C., & Gaskill, D. K.

citation count

  • 61

complete list of authors

  • Wheeler, Virginia||Garces, Nelson||Nyakiti, Luke||Myers-Ward, Rachael||Jernigan, Glenn||Culbertson, James||Eddy, Charles||Gaskill, D Kurt

publication date

  • January 2012

published in