High resolution transmission electron microscopy study of thermal oxidation of single crystalline aluminum nitride Conference Paper uri icon

abstract

  • The impact of process conditions on the structure of thermal oxides formed on AlN was determined by high resolution transmission electron microscopy (HRTEM). Oxidation for 2 hours at 800 C produced mostly amorphous oxide layers whereas oxidation for 6 hours at 1000 C produced partly crystalline and epitaxial oxide layers. The crystalline oxide was mostly single phase -Al2O3except at the surface where it was a mixture of -Al2O3and -Al2O3. Prior to oxidation AlN crystal was almost free of defects. The AlN contained a high density of defects, and measurable amounts of oxygen and nitrogen near the interface when oxidized at 800 C but it was nearly defect-free, and nitrogen- and oxygen-free for oxidation at 1000 C. This could be due to the rapid out diffusion of nitrogen and oxygen at higher temperature leading to equilibrium throughout the sample. 2007 Materials Research Society.

published proceedings

  • Materials Research Society Symposium Proceedings

author list (cited authors)

  • Chaudhuri, J., Lee, R. G., Nyakiti, L. O., Gu, Z., Edgar, J. H., & Li, P.

publication date

  • January 1, 2006 11:11 AM