High resolution transmission electron microscopy study of thermal oxidation of single crystalline aluminum nitride
- Additional Document Info
- View All
The impact of process conditions on the structure of thermal oxides formed on AlN was determined by high resolution transmission electron microscopy (HRTEM). Oxidation for 2 hours at 800 °C produced mostly amorphous oxide layers whereas oxidation for 6 hours at 1000 °C produced partly crystalline and epitaxial oxide layers. The crystalline oxide was mostly single phase α-Al2O3except at the surface where it was a mixture of γ-Al2O3and α-Al2O3. Prior to oxidation AlN crystal was almost free of defects. The AlN contained a high density of defects, and measurable amounts of oxygen and nitrogen near the interface when oxidized at 800 °C but it was nearly defect-free, and nitrogen- and oxygen-free for oxidation at 1000 °C. This could be due to the rapid out diffusion of nitrogen and oxygen at higher temperature leading to equilibrium throughout the sample. © 2007 Materials Research Society.
author list (cited authors)
Chaudhuri, J., Lee, R. G., Nyakiti, L. O., Gu, Z., Edgar, J. H., & Li, P.