Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
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Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ∼ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ∼ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using μ-PL and μ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free. © (2011) Trans Tech Publications.
author list (cited authors)
Myers-Ward, R. L., Nyakiti, L. O., Hite, J. K., Glembocki, O. J., Bezares, F. J., Caldwell, J. D., ... Gaskill, D. K.