TRANSMISSION ELECTRON MICROSCOPY STUDY OF INTERFACE REGION OF ALN / 6H-SIC
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Transmission electron microscopy (TEM) study was performed to investigate the interface region of AlN/6H-SiC. Thick AlN layers were grown on a 3.5° off-axis 6H-SiC substrate at a temperature of 1790°C for 100 hours by sublimation-recondensation method. The energy dispersive x-ray spectroscopy (EDXS) analysis of the interface region indicated incorporation of Si and C in AlN. Lattice images of cross-sectional TEM samples show a faceted interface with step growth. Stacking faults and dislocations were present both in AlN and 6H-SiC at the interface. © 2008 Materials Research Society.
author list (cited authors)
Chaudhuri, J., Nyakiti, L. O., Lu, P., Edgar, J. H., & Li, P.