TRANSMISSION ELECTRON MICROSCOPY STUDY OF INTERFACE REGION OF ALN / 6H-SIC Conference Paper uri icon

abstract

  • AbstractTransmission electron microscopy (TEM) study was performed to investigate the interface region of AlN/6H-SiC. Thick AlN layers were grown on a 3.5 off-axis 6H-SiC substrate at a temperature of 1790 C for 100 hours by sublimation-recondensation method. The energy dispersive x-ray spectroscopy (EDXS) analysis indicated considerable amount of aluminum and nitrogen present in the substrate and Si and C present in AlN. Lattice images of cross-sectional TEM samples show a faceted interface with step growth.

published proceedings

  • MRS Proceedings

author list (cited authors)

  • Chaudhuri, J., Nyakiti, L. O., Lu, P., Edgar, J. H., & Li, P.

publication date

  • January 1, 2007 11:11 AM