TRANSMISSION ELECTRON MICROSCOPY STUDY OF INTERFACE REGION OF ALN/6H-SIC Conference Paper

abstract

• AbstractTransmission electron microscopy (TEM) study was performed to investigate the interface region of AlN/6H-SiC. Thick AlN layers were grown on a 3.5 off-axis 6H-SiC substrate at a temperature of 1790 C for 100 hours by sublimation-recondensation method. The energy dispersive x-ray spectroscopy (EDXS) analysis indicated considerable amount of aluminum and nitrogen present in the substrate and Si and C present in AlN. Lattice images of cross-sectional TEM samples show a faceted interface with step growth.

authors

• Nyakiti, Luke

published proceedings

• NITRIDES AND RELATED BULK MATERIALS

author list (cited authors)

• Chaudhuri, J., Nyakiti, L. O., Lu, P., Edgar, J. H., & Li, P.

citation count

• 0

complete list of authors

• Chaudhuri, Jharna||Nyakiti, Luke Owuor||Lu, Peng||Edgar, James H||Li, Peng

publication date

• December 2008

publisher

• Springer Nature  Publisher

published in

• MRS Online Proceedings Library  Journal

keywords

• 34 Chemical Sciences
• 3403 Macromolecular And Materials Chemistry
• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/PROC-1040-Q10-05

International Standard Book Number (ISBN) 13

• 9781605608396

start page

• 1040-q10-05

end page

• 195

volume

• 1040

URL

• http://dx.doi.org/10.1557/proc-1040-q10-05