DEFECT SELECTIVE ETCHING OF THICK AIN LAYERS GROWN ON 6H-SIC SEEDS - A TRANSMISSION ELECTRON MICROSCOPY STUDY Conference Paper uri icon

abstract

  • AbstractIn the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing cross-sections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3 is associated with the smallest etch pit size.

published proceedings

  • NITRIDES AND RELATED BULK MATERIALS

author list (cited authors)

  • Nyakiti, L. O., Chaudhuri, J., Kenik, E. A., Lu, P., & Edgar, J. H.

citation count

  • 4

complete list of authors

  • Nyakiti, Luke Owuor||Chaudhuri, Jharna||Kenik, Ed A||Lu, Peng||Edgar, James H

publication date

  • December 2008