Vertical conduction mechanism of the epitaxial graphene/n-type 4H-SiC heterojunction at cryogenic temperatures
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Vertical diodes of epitaxial graphene on n - 4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film. Rectifying properties improved at low temperatures as the reverse leakage decreased over six orders of magnitude without freeze-out in either material. Carrier concentration of 10 16 cm -3 in the SiC remained stable down to 15 K, while accumulation charge decreased and depletion width increased in forward bias. The low barrier height of 0.08 eV and absence of recombination-induced emission indicated majority carrier field emission as the dominant conduction mechanism. 2012 American Institute of Physics.
author list (cited authors)
Tadjer, M. J., Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., ... Calle, F.
complete list of authors
Tadjer, MJ||Anderson, TJ||Hobart, KD||Nyakiti, LO||Wheeler, VD||Myers-Ward, RL||Gaskill, DK||Eddy, CR Jr||Kub, FJ||Calle, F