Optical Hall effect measurement of coupled phonon mode - Landau Level transitions in epitaxial Graphene on silicon carbide Conference Paper uri icon


  • ABSTRACTWe report on mid-infrared (600 4000 cm-1), refection-type optical-Hall effect measurements on epitaxial graphene grown on C-face silicon carbide and present Landau-level transition features detected at 1.5 K as a function of magnetic field up to 8 Tesla. The Landau-level transitions are detected in reflection configuration at oblique incidence for wavenumbers below, across and above the silicon carbide reststrahlen range. Small Landau-level transition features are enhanced across the silicon carbide reststrahlen range due to surface-guided wave coupling with the electronic Landau-level transitions in the graphene layer. We analyze the spectral and magnetic-field dependencies of the coupled resonances, and compare our findings with previously reported Landau-level transitions measured in transmission configuration [4,5,6]. Additional features resemble transitions previously assigned to bilayer inclusion [21], as well as graphite [15]. We discuss a model description to account for the electromagnetic polarizability of the graphene layers, and which is sufficient for quantitative model calculation of the optical-Hall effect data.

published proceedings

  • MRS Advances

author list (cited authors)

  • Khne, P., Boosalis, A., Herzinger, C. M., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., ... Hofmann, T.

citation count

  • 1

complete list of authors

  • K├╝hne, P||Boosalis, A||Herzinger, CM||Nyakiti, LO||Wheeler, VD||Myers-Ward, RL||Eddy, CR||Gaskill, DK||Schubert, M||Hofmann, T

publication date

  • January 2013