Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection Academic Article uri icon

abstract

  • We report direct radio-frequency (RF) and millimeter-wave detection of epitaxial graphene field-effect transistors (FETs) up to 110 GHz with no dc biases applied, leveraging the nonlinearity of the channel resistance. A linear dynamic range of $>$ 40 dB was measured, providing at least 20-dB greater linear dynamic range compared to conventional CMOS detectors at transistor level. The measured noise power of the graphene FETs was $sim!hbox{7.5} imes hbox{10}^{-18} hbox{V}^{2}/hbox{Hz}$ at zero bias and without 1/f$ noise. At a 50-$Omega$ load, measured detection responsivity was 71 V/W at 2 GHz to 33 V/W at 110 GHz. The noise-equivalent power at 110 GHz was estimated to be $sim!hbox{80} hbox{pW/Hz} 0.5. For the first time, we demonstrated graphene FETs as zero-bias ultrawideband direct RF detectors with comparable or better performance than state-of-the-art FET-based detectors without dc biases applied. © 2012 IEEE.

altmetric score

  • 7.864

author list (cited authors)

  • Moon, J. S., Seo, H., Antcliffe, M., Lin, S., McGuire, C., Le, D., ... Asbeck, P.

citation count

  • 32

publication date

  • October 2012