Investigation of the Epitaxial Graphene/p-SiC Heterojunction Academic Article

abstract

• There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene-semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I-V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I-V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC. 2012 IEEE.

authors

• Nyakiti, Luke

published proceedings

• IEEE ELECTRON DEVICE LETTERS

altmetric score

• 10.864

author list (cited authors)

• Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., ... Kub, F. J.

citation count

• 13

complete list of authors

• Anderson, TJ||Hobart, KD||Nyakiti, LO||Wheeler, VD||Myers-Ward, RL||Caldwell, JD||Bezares, FJ||Jernigan, GG||Tadjer, MJ||Imhoff, EA||Koehler, AD||Gaskill, DK||Eddy, CR Jr||Kub, FJ

publication date

• November 2012

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Electron Device Letters  Journal

keywords

• Graphene
• Heterojunction
• Semiconductor (sic)

Digital Object Identifier (DOI)

• 10.1109/LED.2012.2211562

start page

• 1610

end page

• 1612

volume

• 33

issue

• 11

URL

• http://dx.doi.org/10.1109/led.2012.2211562