Investigation of the Epitaxial Graphene/p-SiC Heterojunction
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There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene-semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I-V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I-V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC. © 2012 IEEE.
author list (cited authors)
Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., ... Kub, F. J.