Positive Temperature Coefficient SiC PiN Diodes
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Integration of patterned ballast resistance into the anode of SiC PiNs is a solution to the dilemma of negative dV f/dT for such diodes. In fabricated 4H-SiC PiN diodes, we demonstrate a cross-over from negative to positive temperature coefficient for current densities as low as 80 A/cm 2. Adjusting the percentage of the patterned anode area, the positive or neutral dV f/dT can be achieved over a wide current-density range without substantial penalty in the forward voltage drop. This characteristic is crucial for high-power SiC packages with ganged-parallel rectifier arrays. © (2012) Trans Tech Publications.
author list (cited authors)
Imhoff, E. A., Hobart, K. D., Kub, F. J., Ancona, M. G., Myers-Ward, R. L., Garces, N. Y., ... Gaskill, D. K.