Positive Temperature Coefficient SiC PiN Diodes Conference Paper uri icon

abstract

  • Integration of patterned ballast resistance into the anode of SiC PiNs is a solution to the dilemma of negative dVf /dT for such diodes. In fabricated 4H-SiC PiN diodes, we demonstrate a cross-over from negative to positive temperature coefficient for current densities as low as 80 A/cm2. Adjusting the percentage of the patterned anode area, the positive or neutral dVf /dT can be achieved over a wide current-density range without substantial penalty in the forward voltage drop. This characteristic is crucial for high-power SiC packages with ganged-parallel rectifier arrays.

published proceedings

  • Materials Science Forum

author list (cited authors)

  • Imhoff, E. A., Hobart, K. D., Kub, F. J., Ancona, M. G., Myers-Ward, R. L., Garces, N. Y., ... Gaskill, D. K.

citation count

  • 4

complete list of authors

  • Imhoff, Eugene A||Hobart, Karl D||Kub, Francis J||Ancona, MG||Myers-Ward, Rachael L||Garces, NY||Wheeler, Virginia D||Nyakiti, Luke O||Eddy, Charles R||Gaskill, D Kurt

publication date

  • May 2012