Graphene FETs for Zero-Bias Linear Resistive FET Mixers uri icon

abstract

  • In this letter, we present the first graphene FET operation for zero-bias resistive FET mixers, utilizing modulation of graphene channel resistance rather than ambipolar mixer operations, up to 20 GHz. The graphene FETs with a gate length of 0.25 m have an extrinsic cutoff frequency fT of 40 GHz and a maximum oscillation frequency fMAX of 37 GHz. At 2 GHz, the graphene FETs show a conversion loss of 14 dB with gate-pumped resistive FET mixing, with at least > 10-dB improvement over reported graphene mixers. The input third-order intercept points (IIP3s) of 27 dBm are demonstrated at a local oscillator (LO) power of 2.6 dBm. The excellent linearity demonstrated by graphene FETs at low LO power offers the potential for high-quality linear mixers. 1980-2012 IEEE.

published proceedings

  • IEEE ELECTRON DEVICE LETTERS

altmetric score

  • 10.714

author list (cited authors)

  • Moon, J. S., Seo, H., Antcliffe, M., Le, D., McGuire, C., Schmitz, A., ... Asbeck, P.

citation count

  • 55

complete list of authors

  • Moon, JS||Seo, H-C||Antcliffe, M||Le, D||McGuire, C||Schmitz, A||Nyakiti, LO||Gaskill, DK||Campbell, PM||Lee, K-M||Asbeck, P

publication date

  • March 2013