Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy Academic Article uri icon

abstract

  • Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 × 200nm2 area. © 2013 The Japan Society of Applied Physics.

altmetric score

  • 0.25

author list (cited authors)

  • Xu, P., Ackerman, M. L., Barber, S. D., Schoelz, J. K., Qi, D., Thibado, P. M., ... Gaskill, D. K.

citation count

  • 4

publication date

  • March 2013