Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy Academic Article uri icon

abstract

  • Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to 5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a 100200 nm2 area.

published proceedings

  • JAPANESE JOURNAL OF APPLIED PHYSICS

altmetric score

  • 0.25

author list (cited authors)

  • Xu, P., Ackerman, M. L., Barber, S. D., Schoelz, J. K., Qi, D., Thibado, P. M., ... Gaskill, D. K.

citation count

  • 7

complete list of authors

  • Xu, Peng||Ackerman, Matthew L||Barber, Steven D||Schoelz, James K||Qi, Dejun||Thibado, Paul M||Wheeler, Virginia D||Nyakiti, Luke O||Myers-Ward, Rachael L||Eddy, Charles R Jr||Gaskill, D Kurt

publication date

  • March 2013