High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces Conference Paper

abstract

• The electrical characteristics of oxygen functionalized epitaxial graphene and Ti/Au metal contact interfaces were systematically investigated as a function of temperature. As the temperature was increased from 300 K to 673 K, the contact resistance and the sheet resistance decreased by 75% and 33%, respectively. The resistance of oxygen functionalized graphene vs temperature exhibited Arrhenius type behavior with activation energy of 38 meV. The results showed no hysteresis effects in resistance measurements over the temperatures studied here, suggesting the contact interfaces remain stable at high temperatures.

authors

• Nyakiti, Luke

published proceedings

• SILICON CARBIDE AND RELATED MATERIALS 2012

author list (cited authors)

• Nagareddy, V. K., Hernandez, S. C., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy, C., ... Horsfall, A. B.

citation count

• 0

complete list of authors

• Nagareddy, VK||Hernandez, SC||Wheeler, VD||Nyakiti, LO||Myers-Ward, RL||Eddy, CR Jr||Goss, JP||Wright, NG||Walton, SG||Gaskill, DK||Horsfall, AB

publication date

• March 2013

publisher

• Trans Tech Publications  Publisher

published in

• Materials Science Forum  Journal

keywords

• Contact Resistance
• Epitaxial Graphene
• Functionalization
• Metal Contacts
• Oxygen

Digital Object Identifier (DOI)

• 10.4028/www.scientific.net/MSF.740-742.145

International Standard Book Number (ISBN) 13

• 9783037856246

start page

• 145

end page

• +

volume

• 740-742

URL

• http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.145