We report the first experimental demonstration of a lateral graphene heterostructure field-effect transistor (HFET) at wafer scale, where the graphene heterostructure channel consists of epitaxial graphene (Gr)/fluorographene (GrF)/graphene (Gr). GrF is a widebandgap material, providing a potential barrier to lateral carrier transport. Gate bias modulation of the Gr/GrF/Gr barrier via an electric field effect results in normally-off enhancement-mode graphene HFETs with an ON-OFF switching ratio of 10 5 at room temperature. These devices also demonstrate excellent current-voltage saturation, providing a potential path for active RF applications. 1980-2012 IEEE.
Moon, J. S., Seo, H., Stratan, F., Antcliffe, M., Schmitz, A., Ross, R. S., ... Asbeck, P. M.
citation count
41
complete list of authors
Moon, Jeong S||Seo, Hwa-chang||Stratan, Fred||Antcliffe, Mike||Schmitz, Adele||Ross, Richard S||Kiselev, Andrey A||Wheeler, Virginia D||Nyakiti, Luke O||Gaskill, D Kurt||Lee, Kang-Mu||Asbeck, Peter M
