Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC Academic Article uri icon


  • Vertical rectifying contacts of epitaxial graphene grown by Si sublimation on the Si-face of 4H-SiC epilayers were investigated. Forward bias preferential conduction through the step edges was correlated by linear current density normalization. This phenomenon was observed on samples with 2.7-5.8 monolayers of epitaxial graphene as determined by X-ray photoelectron spectroscopy. A modified Richardson plot was implemented to extract the barrier height (0.81 eV at 290 K, 0.99 eV at 30 K) and the electrically dominant SiC step length of a Ti/Al contact overlapping a known region of approximately 0.52 m wide SiC terraces. 2014 AIP Publishing LLC.

published proceedings


author list (cited authors)

  • Tadjer, M. J., Anderson, T. J., Myers-Ward, R. L., Wheeler, V. D., Nyakiti, L. O., Robinson, Z., ... Kub, F. J.

citation count

  • 4

complete list of authors

  • Tadjer, MJ||Anderson, TJ||Myers-Ward, RL||Wheeler, VD||Nyakiti, LO||Robinson, Z||Eddy, CR Jr||Gaskill, DK||Koehler, AD||Hobart, KD||Kub, FJ

publication date

  • January 2014