Analysis of the impact of gate-body signal phase on DTMOS inverters in 0.13m PD-SOI Conference Paper

abstract

• The impact of gate-body signal phase on dynamic-threshold transistors (DTMOS) inverters in 0.13 m PD-SOI was analyzed. Measurements showed that even at low voltages, DTMOS is slower and uses more energy than floating-body (FB) transistors. It was found that positive body-conditioned PS-DTMOS is faster than FB transistors.

name of conference

• 2003 IEEE International Conference on Robotics and Automation (Cat No 03CH37422) SOI-03)

authors

• Nowka, Kevin

published proceedings

• 2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS

author list (cited authors)

• Drake, A. J., Zamdmer, N., Nowka, K. J., & Brown, R. B.

citation count

• 11

complete list of authors

• Drake, AJ||Zamdmer, N||Nowka, KJ||Brown, RB

publication date

• January 2003

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 40 Engineering
• 4008 Electrical Engineering
• 4009 Electronics, Sensors And Digital Hardware

Digital Object Identifier (DOI)

• 10.1109/soi.2003.1242914

International Standard Book Number (ISBN) 10

• 0-7803-7815-6

start page

• 99

end page

• 100

URL

• http://dx.doi.org/10.1109/soi.2003.1242914