GaSb-based diode lasers with asymmetric coupled quantum wells Academic Article

abstract

• 2018 Author(s). Asymmetric tunnel coupled quantum wells with built-in resonant second order nonlinearity were designed and fabricated within the antimonide material system. The quantum wells demonstrated intensive photo- and electroluminescence responses associated with optical transitions between two tunnel-split conduction band subbands and one valence band subband. The thickness of the tunnel barrier defined the optical gain bandwidth and resonance energy for the difference frequency generation. The test diode lasers based on asymmetric quantum wells with a conduction subband splitting of about 25 meV operated near 2.1 m at room temperature and demonstrated high differential gain and excellent performance parameters. The experimental modal gain spectra showed relatively flat top and an extended bandwidth at high pumping levels.

authors

• Belyanin, Alexey

published proceedings

• APPLIED PHYSICS LETTERS

author list (cited authors)

• Jiang, J., Shterengas, L., Hosoda, T., Belyanin, A., Kipshidze, G., & Belenky, G.

citation count

• 4

complete list of authors

• Jiang, Jiang||Shterengas, Leon||Hosoda, Takashi||Belyanin, Alexei||Kipshidze, Gela||Belenky, Gregory

publication date

• August 2018

publisher

• AIP Publishing  Publisher

published in

• Applied Physics Letters  Journal

Digital Object Identifier (DOI)

• 10.1063/1.5046426

start page

• 071106

end page

• 071106

volume

• 113

issue

• 7

URL

• http://dx.doi.org/10.1063/1.5046426