On the investigation of cascode power amplifiers for 5G applications Academic Article

abstract

• 2019 Wiley Periodicals, Inc. BiCMOS processes provide not only standard NMOS devices, but also high-performance SiGe HBTs, facilitating simultaneous use of both NMOS and HBT. This article adopts the advantages of both HBT and NMOS to achieve a high-gain, high-power, and efficient power amplifier (PA). Through an analysis of cascode amplifiers implementing different combinations of HBT and NMOS, a high-performance 28-GHz BiCMOS PA, which combines both HBT and body-floating NMOS strengths to achieve 15.7-dB gain, 19.6-dBm saturated output power (P sat ), 17.5-dBm output 1-dB compression (OP1dB), and 28.8% maximum PAE, is proposed for 5G applications.

authors

• Nguyen, Cam Van

published proceedings

• Microwave and Optical Technology Letters

author list (cited authors)

• Hsiao, M., Kim, K., & Nguyen, C.

citation count

• 3

complete list of authors

• Hsiao, Meng‐Jie||Kim, Kyoungwoon||Nguyen, Cam

publication date

• July 2019

publisher

• Wiley  Publisher

published in

• MICROWAVE AND OPTICAL TECHNOLOGY LETTERS  Journal

keywords

• 40 Engineering
• 4009 Electronics, Sensors And Digital Hardware

Digital Object Identifier (DOI)

• 10.1002/mop.31761

start page

• 1774

end page

• 1777

volume

• 61

issue

• 7

URL

• http://dx.doi.org/10.1002/mop.31761