On the investigation of cascode power amplifiers for 5G applications Academic Article uri icon

abstract

  • © 2019 Wiley Periodicals, Inc. BiCMOS processes provide not only standard NMOS devices, but also high-performance SiGe HBTs, facilitating simultaneous use of both NMOS and HBT. This article adopts the advantages of both HBT and NMOS to achieve a high-gain, high-power, and efficient power amplifier (PA). Through an analysis of cascode amplifiers implementing different combinations of HBT and NMOS, a high-performance 28-GHz BiCMOS PA, which combines both HBT and body-floating NMOS strengths to achieve 15.7-dB gain, 19.6-dBm saturated output power (P sat ), 17.5-dBm output 1-dB compression (OP1dB), and 28.8% maximum PAE, is proposed for 5G applications.

author list (cited authors)

  • Hsiao, M., Kim, K., & Nguyen, C.

citation count

  • 3

publication date

  • July 2019

publisher