Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H2–CH4–[x]SiH4 Gas Mixtures (x = 28, 29, 30) Academic Article uri icon


  • © 2018 American Chemical Society. Silicon-vacancy (SiV - ) color center in diamond is of high interest for applications in nanophotonics and quantum information technologies, as a single photon emitter with excellent spectral properties. To obtain spectrally identical SiV - emitters, we doped homoepitaxial diamond films in situ with 28 Si, 29 Si, and 30 Si isotopes using isotopically enriched (>99.9%) silane SiH 4 gas added in H 2 -CH 4 mixtures in the course of the microwave plasma-assisted chemical vapor deposition process. Zero-phonon line components as narrow as ∼4.8 GHz were measured in both absorption and luminescence spectra for the monoisotopic SiV - ensembles with a concentration of a few parts per billion. We determined with high accuracy the Si isotopic energy shift of SiV - zero-phonon line. The SiV - emission intensity is shown to be easily controlled by the doped epifilm thickness. Also, we identified and characterized the localized single photon SiV - sources. The developed doping process opens a way to produce the SiV - emitter ensembles with energy confined in an extremely narrow range.

author list (cited authors)

  • Ralchenko, V. G., Sedov, V. S., Martyanov, A. K., Bolshakov, A. P., Boldyrev, K. N., Krivobok, V. S., ... Konov, V. I.

complete list of authors

  • Ralchenko, Victor G||Sedov, Vadim S||Martyanov, Artem K||Bolshakov, Andrey P||Boldyrev, Kirill N||Krivobok, Vladimir S||Nikolaev, Sergei N||Bolshedvorskii, Stepan V||Rubinas, Olga R||Akimov, Alexey V||Khomich, Andrey A||Bushuev, Egor V||Khmelnitsky, Roman A||Konov, Vitaly I

publication date

  • January 1, 2018 11:11 AM