Small B-cluster ions induced damage in silicon Academic Article uri icon

abstract

  • Small molecule-cluster ions, such as BF2, BSi, BGe, B 10H14 and Bn can be used for shallow junction formation. We studied the cluster induced damage in silicon with different small clusters in keV energy range. The radiation damage was measured by glancing angle RBS/channeling. The measurement shows that the cluster induced damage per atom is quite different from the monomer ion induced damage at the same velocity. The small-cluster ions show strong enhanced radiation damage per atom. In this paper we will show non-linear effects on small boron-cluster induced damage in silicon. The cluster size dependence of this non-linear effect will also be presented. 2005 Elsevier B.V. All rights reserved.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Liu, J., Wang, X., Lin, S., Chen, H., & Chu, W.

citation count

  • 1

complete list of authors

  • Liu, Jiarui||Wang, Xuemai||Lin, Shao||Chen, Hui||Chu, Wei-Kan

publication date

  • December 2005