Design of a wideband 0.18‐μm SiGe BiCMOS power amplifier in Ku and K bands Academic Article uri icon


  • © 2018 Wiley Periodicals, Inc. A new wideband 0.18-μm SiGe BiCMOS power amplifier (PA) operating from 16.5 to 25.5 GHz is presented. The PA consists of a drive amplifier and two main amplifiers integrated through lumped-element Wilkinson power divider and combiner. The PA exploits the advantages of both HBT and NMOS characteristics in a cascode topology in addition to floating the NMOS body to achieve good gain, output power, power-aided efficiency (PAE), and linearity. The developed PA has relatively flat saturated output power (Psat) of 18.5-20.8 dBm, output 1-dB compression point (OP1dB) of 15.1-18.1 dBm, 13.5-23% maximum PAE, and gain of 19.5 ±1.5 dB across 16.5-25.5 GHz. At 24 GHz, the PA achieves Psat, OP1dB, maximum PAE, and gain of 20.8 dBm, 18.1 dBm, 23%, and 20 dB, respectively.

published proceedings

  • Microwave and Optical Technology Letters

author list (cited authors)

  • Hsiao, M., Kim, K., & Nguyen, C.

citation count

  • 2

complete list of authors

  • Hsiao, Meng‐Jie||Kim, Kyoungwoon||Nguyen, Cam

publication date

  • October 2018