Infrared generation in semiconductor lasers Patent

abstract

• Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.

authors

• Belyanin, Alexey
• Scully, Marlan

author list (cited authors)

• Scully, M., Belyanin, A., Kocharovsky, V., & Kocharovsky, V.

complete list of authors

• Scully, Marlan||Belyanin, Alexey||Kocharovsky, Vitaly||Kocharovsky, Vladimir

publication date

• August 2004

URI

• https://hdl.handle.net/1969.1/176762