A GaP MESFET for High Temperature Applications Chapter uri icon

abstract

  • © 1999 by the Institute of Electrical and Electronics Engineers, Inc. A process for fabricating GaP metal semiconductor field effect transistors (MESFET’s) capable of operating at temperatures of up to 295°C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability.

author list (cited authors)

  • Kirschman, R.

Book Title

  • High-Temperature Electronics

publication date

  • January 1, 2009 11:11 AM

publisher