Dynamics of subsurface and surface chemisorption for B, C, and N on GaAs and InP. Academic Article

abstract

• Using Hellmann-Feynman molecular-dynamics simulations, we have investigated interactions of first-row elements with the (110) surfaces of GaAs and InP. We find that these atoms prefer to occupy subsurface sites. The open structure of the tetrahedrally bonded GaAs and InP, together with the small sizes of the first-row elements, makes it relatively easy for these atoms to move beneath the surface. Surface chemisorption is also observed in the simulations, but is found to be metastable. 1991 The American Physical Society.

authors

• Allen, Roland

published proceedings

• Phys Rev B Condens Matter

author list (cited authors)

• Menon, M., & Allen, R. E.

citation count

• 6

complete list of authors

• Menon, M||Allen, RE

publication date

• November 1991

publisher

• American Physical Society (APS)  Publisher

published in

• Physical Review B (Condensed Matter)  Journal

keywords

• Boron
• Electronic States
• Physics
• Semiconductor Surfaces
• Si(111)
• Simulations

PubMed Central ID

• 9999252

Digital Object Identifier (DOI)

• 10.1103/physrevb.44.11293

URI

• http://dx.doi.org/10.1103/PhysRevB.44.11293

start page

• 11293

end page

• 11301

volume

• 44

issue

• 20

URL

• http://dx.doi.org/10.1103/physrevb.44.11293