SiC Mosfet Versus Si IGBT Based H-Bridge Quasi-Z-Source Converter Conference Paper

abstract

• 2018 IEEE. H-bridge quasi-Z-Source (HBqZS) converter became attractive solution for integration of photovoltaic (PV) panels to low voltage grid due to single stage power conversion. In this paper, a comparison analysis of two power semiconductor technologies, SiC-Mosfet and Si-IGBT, applied to HBqZS converter is Prasented. The comparison includes: efficiency and losses distribution among converter's components, impact of switching frequency on the parameters of passive components, as well as cost for both technologies. Finally, hardware SiC-Mosfet model is compared with simulation analysis.

name of conference

• 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG 2018)

authors

• Abu-Rub, Haitham

published proceedings

• 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG 2018)

author list (cited authors)

• Gajowik, T., Mozdzynski, K., Malinowski, M., Ghazi, K., & Abu-Rub, H.

citation count

• 1

complete list of authors

• Gajowik, Tomasz||Mozdzynski, Kamil||Malinowski, Mariusz||Ghazi, Khalid||Abu-Rub, Haitam

publication date

• April 2018

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 7 Affordable And Clean Energy

Digital Object Identifier (DOI)

• 10.1109/cpe.2018.8372612

International Standard Book Number (ISBN) 13

• 9781538625088

start page

• 1

end page

• 5

URL

• http://dx.doi.org/10.1109/cpe.2018.8372612

user-defined tag

• 7 Affordable and Clean Energy