Effect of spontaneous emission and recombination on the four-wavemixing profiles involving autoionizing resonances
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A general expression for the four-wavemixing profiles in situations involving autoionizing resonances is derived by taking fully into account the spontaneous-emission characteristics of the autoionizing states. The signals are valid for arbitrary values of Fano asymmetry parameters, field strengths, and spontaneous-emission rates. The dramatic increase in the four-wavemixing signal for field strengths corresponding to the confluence is demonstrated. The spontaneous emission is shown to affect the line shapes not only in weak fields but also in strong fields. The effects of spontaneous emission are found to be most important for field strengths corresponding to confluence which is similar to the problem of laser-induced autoionization. 1983 The American Physical Society.
author list (cited authors)
Agarwal, G. S., & Lakshmi, P. A.
complete list of authors
Agarwal, GS||Lakshmi, P Anantha