The bipolar and unipolar reversible behavior on the forgetting memristor model Academic Article

abstract

• 2015 Elsevier B.V. In the further study of our previous forgetting model in Chen et al. (2013) [27], we found that the three dimensional (3D) model can be a more general mathematical model compared with the one dimensional (1D) model. It can describe not only the behaviors of the bipolar, the unipolar and the bipolar with forgetting effect memristor, but also the reversible process between the bipolar and the unipolar. The corresponding PSPICE model is provided, and the maiden simulations for different types of memristor verify the functions of the 3D memristor model.

authors

• Huang, Tingwen

published proceedings

• NEUROCOMPUTING

author list (cited authors)

• Chen, L., Li, C., Huang, T., Hu, X., & Chen, Y.

citation count

• 17

complete list of authors

• Chen, Ling||Li, Chuandong||Huang, Tingwen||Hu, Xiaofang||Chen, Yiran

publication date

• January 2016

publisher

• Elsevier  Publisher

published in

• Neurocomputing  Journal

keywords

• Bipolar
• Forgetting Effect
• Reversible
• Unipolar

Digital Object Identifier (DOI)

• 10.1016/j.neucom.2015.06.067

start page

• 1637

end page

• 1643

volume

• 171

URL

• http://dx.doi.org/10.1016/j.neucom.2015.06.067