Design of SiC-Based Single-Phase Quasi-Z-Source Inverter Conference Paper

abstract

• 2018 IEEE. Silicon Carbide (SiC)-based single-phase quasi-Z-source inverter (qZSI) is proposed in this paper to provide a high power density and cost benefit solution for the Photovoltaic (PV) power application. Bulky qZS impedance network is unavoidable in conventional single-phase qZSI even with SiC power devices, due to handling double-line-frequency (2) ripple. The design of SiC-based single-phase qZSI is addressed in this paper through power loss evaluation and impedance parameters determination with active power filter's phase leg for compensting the 2 ripple. All passive components are small in size and weight under the high switching frequency of SiC devices. Power devices' losses of SiC and Si-based inverter are compared. Simulation results at the designed parameters are introduced to validate the proposed solution.

name of conference

• 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG 2018)

authors

• Abu-Rub, Haitham

published proceedings

• PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018)

author list (cited authors)

• Liu, Y., Abu-Rub, H., Wu, Y., & Ghazi, K. A.

citation count

• 3

complete list of authors

• Liu, Yushan||Abu-Rub, Haitham||Wu, Yichang||Ghazi, Khalid Ahamed

publication date

• April 2018

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• 2017 11th IEEE International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)  Journal

keywords

• Power Density
• Quasi-z-source Inverter
• Silicon Carbide
• Single-phase Inverter
• Switching Frequency

Digital Object Identifier (DOI)

• 10.1109/cpe.2018.8372555

International Standard Book Number (ISBN) 13

• 9781538625088

start page

• 1

end page

• 7

URL

• http://dx.doi.org/10.1109/cpe.2018.8372555