Geometric effects on dislocation nucleation in strained electronics
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Dislocation loops may be nucleated from sharp geometric features in strained micro- and nano-electronic devices. This process is investigated by a dissipative cohesive interface model which treats the dislocation core as a continuous, inhomogeneous lattice slip field. As a representative example, we calculate the critical external stress for dislocation nucleation from the edges/corners of a rectangular stress-free Si3 N4 pad on a Si substrate as a function of geometric parameters such as the length-to-height ratio and the three-dimensional shape of the pad. The shapes of the dislocations are also simulated. © 2009 American Institute of Physics.
author list (cited authors)
Li, T. L., Lee, J. H., Gao, Y. F., Pharr, G. M., Huang, M., & Tsui, T. Y.