The mechanical behavior of silicon during small-scale indentation Academic Article uri icon


  • The mechanical behavior of crystalline silicon during small-scale indentation has been studied using a Nanoindenter. Tests were performed on both p-type and n-type materials in the (100), (110), and (111) orientations at peak loads ranging from 0.5 to 120 mN. The indentation load-displacement curves exhibit two features which appear to be unique to silicon. First, at large peak loads, a sharp discontinuity in displacement is observed as the indenter is unloaded. Second, at small peak loads, a large, non-degenerative hysteresis is exhibited. Possible mechanistic origins for the discontinuity and hysteresis are discussed. 1990 AIME.

published proceedings

  • Journal of Electronic Materials

author list (cited authors)

  • Pharr, G. M., Oliver, W. C., & Clarke, D. R.

citation count

  • 115

complete list of authors

  • Pharr, GM||Oliver, WC||Clarke, DR

publication date

  • September 1990